1. Material Science and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms organized in a tetrahedral latticework, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying phenomenal atomic bond stamina.
The Si– C bond, with a bond power of around 318 kJ/mol, is amongst the best in architectural porcelains, conferring exceptional thermal stability, firmness, and resistance to chemical strike.
This durable covalent network causes a product with a melting point surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide ceramics available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical strength and creep resistance at temperature levels over 1400 ° C, where many steels and traditional ceramics start to soften or weaken.
Its low coefficient of thermal growth (~ 4.0 × 10 â»â¶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal biking without catastrophic breaking, a vital characteristic for crucible performance.
These inherent residential or commercial properties stem from the balanced electronegativity and similar atomic sizes of silicon and carbon, which promote a highly steady and largely packed crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in durability and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperatures over 2000 ° C, usually with boron or carbon additives to boost densification and grain boundary cohesion.
This procedure yields a totally thick, fine-grained structure with marginal porosity (
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